By Sundarapandian Vaidyanathan, Christos Volos
This ebook studies at the most modern advances in and purposes of memristors, memristive units and structures. It gathers 20 contributed chapters via topic specialists, together with pioneers within the box comparable to Leon Chua (UC Berkeley, united states) and R.S. Williams (HP Labs, USA), who're really good within the a number of issues addressed during this ebook, and covers large parts of memristors and memristive units corresponding to: memristor emulators, oscillators, chaotic and hyperchaotic memristive platforms, regulate of memristive structures, memristor-based min-max circuits, canonic memristors, memristive-based neuromorphic functions, implementation of memristor-based chaotic oscillators, inverse memristors, linear memristor units, behind schedule memristive structures, flux-controlled memristive emulators, and so forth.
Throughout the publication, precise emphasis is given to papers supplying useful options and layout, modeling, and implementation insights to deal with present examine difficulties in memristors, memristive units and platforms. As such, it bargains a helpful reference publication on memristors and memristive units for graduate scholars and researchers with a simple wisdom of electric and regulate structures engineering.
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Extra resources for Advances in Memristors, Memristive Devices and Systems
C World’s simplest oscillator using only one memristor. 004 The parameters chosen in this paper are summarized in Table 1. The 3D cross section of the surface f1(x1, x2, v) and f2(x1, x2, v) are shown in Fig. 4 V. Although (1) can be implemented in hardware by several methods, all results in this paper are obtained by computer simulations to avoid ambiguities in modeling the physical devices. 2 Pinched Hysteresis Loop and DC V-I Curve of the Second-Order-Generic Memristor from Fig. 1 Pinched Hysteresis Loops Under Bipolar Periodic Signal The memristor exhibits a unique ﬁngerprint called a pinched hysteresis loop under excitation of any bipolar periodic signal with zero average.
Sah et al. 4 0 2 4 − z1 Þðs − z2 Þ Fig. 9 Poles and zeros diagram of the admittance function Yðs; VÞ = kðs ðs − p1 Þðs − p2 Þ for −20 V ≤ V ≤ 20 V. a Zeros Diagram. b Poles Diagram. Arrowheads indicate the direction of pole movements in the interval of −20 V ≤ V ≤ 0 V. The movements of poles in the interval of 0 V ≤ V ≤ 20 V, which are the reverse direction of −20 V ≤ V ≤ 0 V interval, are omitted to avoid the clutter. 4759895, respectively A Simple Oscillator Using Memristor Fig. Pd. Sah et al.
2013; Mannan et al. 2016; Rajamani et al. 2016). All of these pinched hysteresis loops exhibit the ﬁngerprints of a memristor. 2 DC V-I Curve The DC V-I curve of a generic memristor is equivalent to a nonlinear resistor at the DC steady state regime (Chua 2014). e. x1 = x̂1 ðVÞ ð2aÞ x2 = x̂2 ðVÞ ð2bÞ Substituting (2a) and (2b) in (1b), and solving for the DC current i = I from (1a), we obtain A Simple Oscillator Using Memristor 25 Fig. 5 The DC equilibrium of a state x1, b state x2, and c DC V-I curve in steady state regime, for −20 V ≤ V ≤ 20 V, d portions of the DC V-I curve which give rise to two distinct super-critical Hopf bifurcations I = Gðx1 , x2 Þ V ð3Þ Applying (2a), (2b) and (3), for −20 V ≤ V ≤ 20 V, we obtain the red DC V-I curve of our second-order generic memristor shown in Fig.
Advances in Memristors, Memristive Devices and Systems by Sundarapandian Vaidyanathan, Christos Volos